1 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-intersil or 321-724-7143 | intersil and design is a trademark of intersil americas inc. | copyright ? intersil americas inc. 2001 ha-5134/883 precision quad operational amplifier description the ha-5134/883 is a precision quad operational amplifier that is pin compatible with the op-400, lt1014, op11, rm4156, and lm148 as well as the ha-4741/883. each amplifier fea- tures guaranteed maximum values for offset voltage of 350 v, offset voltage drift of 2 v/ o c (max), and offset current of 75na over the full military temperature range while cmrr/psrr is guaranteed greater than 94db and open loop gain is guaran- teed above 500kv/v from -55 o c to +125 o c. room temperature specifications exceed these values such as an offset voltage matching specification between channels of 200 v(max)at +25 o c. precision performance of the ha-5134/883 is enhanced by a noise voltage density of 7nv/ hz at 1khz (typ), noise current density of 2pa/ hz at 1khz and channel separation of 120db (min). each of the four unity gain stable amps on the quad are electrically isolated, having only supply lines in common and are fabricated using dielectric isolation to insure quality perfor- mance in the most demanding applications. the ha-5134/883 is ideal for compact circuits such as instru- mentation amplifiers, state-variable filters, and low level trans- ducer amplifiers. other applications include precision data acquisition systems, precision integrators, and accurate thresh- old detectors in designs where board space is a limitation. part number information part number temperature range package ha1-5134/883 -55 o cto+125 o c 14leadcerdip ha4-5134/883 -55 o cto+125 o c 20 lead ceramic lcc features ? this circuit is processed in accordance to mil-std- 883 and is fully conformant under the provisions of paragraph 1.2.1. low offset voltage (+25 o c).............200 v(max) (fulltemp.)............350 v(max) lowoffsetvoltagedriftattemp........2 v/ o c(max) offsetvoltagematch..................350 v(max) highchannelseparation ..............120db(min) low noise (f 100hz) . . . ...........10nv/ hz (max) widebandwidth.......................4mhz(typ) highcmrr/psrr ....................100db(min) highvoltagegain .................. 800kv/v (min) dielectric isolation applications instrumentation amplifiers state-variable filters precision integrators threshold detectors precision data acquisition systems low-level transducer amplifiers july 2001 spec number 511033-883 file number 3713.1 pinouts ha-5134/883 (cerdip) top view ha-5134/883 (clcc) top view 1 2 3 4 5 6 7 14 13 12 11 10 9 8 v- out3 out4 v+ 1 + 4 + 2 + 3 + out1 -in1 out2 +in1 +in2 -in2 -in4 +in4 +in3 -in3 -- - - 4 5 6 7 8 9 10111213 3 2 1 20 19 15 14 18 17 16 4 + 3 + 2 + 1 + out1 nc out4 nc v- nc nc v+ nc out2 nc out3 +in1 -in1 +in2 -in2 +in3 +in4 -in3 -in4 -- - - o b s o l e t e p r o d u c t p o s s i b l e s u b s t i t u t e p r o d u c t h a - 5 1 0 4 / 8 8 3 o r 5 9 6 2 - 8 8 5 0 2 0 1
2 specifications ha-5134/883 absolute maximum ratings thermal information voltagebetweenv+andv-terminals.................... 40v differentialinputvoltage ............................... 6v voltageateitherinputterminal......................v+tov- inputcurrent.......................................25ma outputcurrent....................fullshortcircuitprotection outputcurrentduration...........................indefinite (one amplifier shorted to ground) junctiontemperature.............................. +175 o c storagetemperaturerange .................-65 o cto+150 o c esdrating...................................... <2000v lead temperature (soldering 10s) . . . . . . . . . . . . . . . . . . . . +300 o c thermal resistance ja jc cerdippackage................... 75 o c/w 20 o c/w ceramiclccpackage .............. 65 o c/w 15 o c/w package power dissipation limit at +75 o cfort j +175 o c cerdippackage.................................1.33w ceramiclccpackage ............................1.54w package power dissipation derating factor above +75 o c cerdippackage.............................13.3mw/ o c ceramiclccpackage ........................15.4mw/ o c caution: stresses above those listed in ?absolute maximum ratings? may cause permanent damage to the device. this is a stress only rating and operatio n of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. operating conditions operatingtemperaturerange................-55 o cto+125 o c operating supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15v v incm 1/2 (v+ - v-) r l 2k ? table 1. dc electrical performance characteristics device tested at: v supply = 15v, r source =5 0? ,r load =100k ? ,v out = 0v, unless otherwise specified. parameters symbol conditions group a subgroups temperature limits units min max inputoffsetvoltage v io v cm =0v 1 +25 o c -200 200 v 2, 3 +125 o c, -55 o c -350 350 v offset voltage match ? v io ? v io (max) -v io (min) ? 1+25 o c-200 v 2, 3 +125 o c, -55 o c-350 v input bias current +i b v cm =0v, +r s =10k ? , -r s =5 0? 1+25 o c -50 50 na 2, 3 +125 o c, -55 o c -75 75 na -i b v cm =0v, +r s =5 0? , -r s =10k ? 1+25 o c -50 50 na 2, 3 +125 o c, -55 o c -75 75 na input offset current i io v cm =0v, +r s =10k ? , -r s =10k ? 1+25 o c -50 50 na 2, 3 +125 o c, -55 o c -75 75 na common mode range +cmr v+ = +5v, v- = -25v 1 +25 o c10-v 2, 3 +125 o c, -55 o c10 - v -cmr v+ = +25v, v- = -5v 1 +25 o c--10v 2, 3 +125 o c, -55 o c--10v large signal voltage gain +a vol v out =0vand+10v, r l =2k ? 4+25 o c800-kv/v 5, 6 +125 o c, -55 o c500 - kv/v -a vol v out = 0v and -10v, r l =2k ? 4+25 o c800-kv/v 5, 6 +125 o c, -55 o c500 - kv/v common mode rejection ratio +cmrr ? v cm =10v, v+=+5v,v-=-25v, v out =-10v 1+25 o c100-db 2, 3 +125 o c, -55 o c94 - db -cmrr ? v cm =10v, v+=+25v,v-=-5v, v out =+10v 1+25 o c100-db 2, 3 +125 o c, -55 o c94 - db output voltage swing +v out1 r l =2k ? 4+25 o c12-v 5, 6 +125 o c, -55 o c12 - v -v out1 r l =2k ? 4+25 o c--12v 5, 6 +125 o c, -55 o c--12v spec number 511033-883
3 spec number 511033-883 specifications ha-5134/883 output current +i out v out =-10v 4 +25 o c15-ma 5, 6 +125 o c, -55 o c8 -ma -i out v out =+10v 4 +25 o c--15ma 5, 6 +125 o c, -55 o c- -8ma quiescent power supply current +i cc v out =0v,i out = 0ma 1+25 o c-6.8ma 2, 3 +125 o c, -55 o c- 8ma -i cc v out =0v,i out = 0ma 1+25 o c-6.8ma 2, 3 +125 o c, -55 o c- 8ma power supply rejection ratio +psrr ? v sup =10v, v+=+20v,v-=-15v v+=+10v,v-=-15v 1+25 o c100-db 2, 3 +125 o c, -55 o c94 - db -psrr ? v sup =10v, v+=+15v,v-=-20v v+=+15v,v-=-10v 1+25 o c100-db 2, 3 +125 o c, -55 o c94 - db table 2. ac electrical performance characteristics device tested at: v supply = 15v, r source =50 ? ,r load =2k ? ,c load =50pf,a vcl = +1v/v, unless otherwise specified. parameters symbol conditions group a subgroups temperature limits units min max slew rate +sr v out = -3v to +3v 7 +25 o c0.75-v/ s -sr v out =+3vto-3v 7 +25 o c0.75-v/ s rise and fall time t r v out =0to+200mv 10% t r 90% 7+25 o c-400ns t f v out =0to-200mv 10% t f 90% 7+25 o c-400ns overshoot +os v out = 0 to +200mv 7 +25 o c-40% -os v out =0to-200mv 7 +25 o c-40% table 3. electrical performance characteristics device characterized at: v supply = 15v, r load =2k ? ,c load = 50pf, unless otherwise specified. parameters symbol conditions notes temperature limits units min max average offset voltage drift v io tc v cm =0v 1 -55 o c to +125 o c- 2 v/ o c differential input resistance r in v cm =0v 1 +25 o c20-m ? low frequency peak-to-peak noise e np-p 0.1hz to 10hz 1 +25 o c-0.25 v p-p input noise voltage density e n r s =20 ? ,f o =1khz 1 +25 o c-10nv / hz input noise current density i n r s =2m ? ,f o =1khz 1 +25 o c-2pa / hz table 1. dc electrical performance characteristics (continued) device tested at: v supply = 15v, r source =5 0? ,r load =100k ? ,v out = 0v, unless otherwise specified. parameters symbol conditions group a subgroups temperature limits units min max
4 spec number 511033-883 specifications ha-5134/883 gain bandwidth product gbwp v o =200mv, f o 100khz 1+25 o c3-mhz unity bandwidth product ubwp v o = 200mv 1 +25 o c3-mhz slew rate +sr v out =-3vto+3v 1 +25 o cto+125 o c0.75 - v/ s -sr v out =+3vto-3v 1 -55 o c0.6-v/ s full power bandwidth fpbw v peak = 10v 1, 2 +25 o c12-khz minimum closed loop stable gain clsg r l =2k ? ,c l = 50pf 1 -55 o c to +125 o c+1 - v/v rise and fall time t r v out = 0v to +200mv 1, 4 -55 o c to +125 o c- 400 ns t f v out = 0v to -200mv 1, 4 -55 o c to +125 o c- 400 ns overshoot +os v out = 0v to +200mv 1 -55 o c to +125 o c- 40 % -os v out = 0v to -200mv 1 -55 o c to +125 o c- 40 % output resistance r out open loop 1 +25 o c-86 ? power consumption pc v out =0v,i out = 0ma 1, 3 -55 o c to +125 o c- 240 mw channel separation (ac) cs (ac) v in =1v p-p , f o = 100hz 1+25 o c120-db v in =1v p-p , f o = 10khz 1+25 o c120-db channel separation (dc) cs (dc) v o = 10v (20v p-p ), ? v io 20 v 1+25 o c120-db notes: 1. parameters listed in table 3 are controlled via design or process parameters and are not directly tested at final production. these param- eters are lab characterized upon initial design release, or upon design changes. these parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot to lot and within lot variation. 2. full power bandwidth guarantee based on slew rate measurement using fpbw = slew rate/(2 v peak ). 3. power consumption based upon quiescent supply current test maximum. (no load on outputs.). 4. measured between 10% and 90% points. table 4. electrical test requirements mil-std-883 test requirements subgroups (see tables 1 and 2) interim electrical parameters (pre burn-in) 1 final electrical test parameters 1 (note 1), 2, 3, 4, 5, 6, 7 group a test requirements 1, 2, 3, 4, 5, 6, 7 groups c and d endpoints 1 note: 1. pda applies to subgroup 1 only. table 3. electrical performance characteristics (continued) device characterized at: v supply = 15v, r load =2k ? ,c load = 50pf, unless otherwise specified. parameters symbol conditions notes temperature limits units min max
5 all intersil products are manufactured, assembled and tested utilizing iso9000 quality systems. intersil corporation?s quality certifications can be viewed at website www.intersil.com/design/quality/iso.asp . intersil products are sold by description only. intersil corporation reserves the right to make changes in circuit design and/or specifications at a ny time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnished by intersil is believed to b e accurate and reli- able. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third p arties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiaries. for information regarding intersil corporation and its products, see web site www.intersil.com ha-5134/883 die characteristics die dimensions: 91 x 114 x 19 mils 1mils 2300 x 2900 x 483 m 25.4 m metallization: type: al, 1% cu thickness: 16k ? 2k ? glassivation: type: nitride (si3n4) over silox (sio2, 5% phos.) silox thickness: 12k ? 2k ? nitride thickness: 3.5k ? 1.5k ? worst case current density: 2.5 x 10 5 a/cm 2 this device meets glassivation integrity test requirement per mil-std-883 method 2021 and mil-i-38535 paragraph 30.5.5.4. substrate potential (powered up): unbiased transistor count: 160 process: bipolar dielectric isolation metallization mask layout ha-5134/883 -in1 out1 out4 -in4 +in4 v- +in3 -in3 out3 out2 -in2 +in2 v+ +in1 spec number 511033-883
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